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Thin Film Deposition
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Our portfolio includes different technologies to treat specimens using chemical and/or thermal processes. Rapid Thermal Annealing - Processing - Chemical Vapor Deposition systems have the capability to process samples from few mm² up to 200 mm diameter. These versatile machines can perform a wide range of processes from contact annealing to chemical vapor deposition of graphene or h-BN. The cold wall chamber, the extended temperature range as well as the high vacuum capabilities offer the possibility to process high temperature resistant substrates (GaN, SiC, ceramics) as well as temperature sensitive substrates like polymers.
Rapid Thermal Annealing/Chemical Vapor Deposition
RTA can be used for so-called resident reactions, wherein heat is applied to modify the structure of already existing materials in or on the wafer with no addition of external substances. Typical processes of resident reactions are: implant annealing, ohmic contact annealing, diffusion of dopants, densification and crystallization. A second class of processes may be called surface interaction in which the heat causes modification of the wafer surface by gases brought to it. Unlike in the first category, material in the form of a reactive gas is added during the heating process. Examples are: Oxidation, Nitridation, Selenization, Silicon carbonization.
The deposition processes are based on Chemical Vapor Deposition (CVD). In CVD, the gases react with the surface of the heated substrate to form a thin layer that grows over that surface. The chemical reaction is activated by heat, photons and plasma. This group of applications requires more elaborate equipment than the first two. Reaction gases are introduced at controlled rate into an atmospheric or low-pressure environment. Several different gases may have to be supplied and programmed in various ratios to optimize these processes. Additional features are required for silicon based CVD processes. We offer a variety of models with different chamber sizes, temperature ranges and gas flow options.
- AS-Micro Economical 3-inch RTP system for laboratories and education, with dual chamber version to avoid cross contamination issues
- AS-One Halogen lamp furnace with cold wall chamber; available in 4-inch (100 mm) and 6-inch (150 mm) version
- AS-Premium Halogen lamp furnace with cold wall chamber for samples up to 156x156 mm2 and optional connection to a cluster tool or glove box
- AS-Master Multi-zone halogen lamp furnace with cold wall chamber for samples up 6-inch (150 mm); with cluster tool or cassette loading versions
- Zenith-100 High temperature (2000 0C)Tungsten heater furnace with cold wall chamber for 4-inch (100 mm) samples
Direct Liquid Injection
CVD techniques can only deposit materials that can be vaporized before deposition on the desired substrate. For more complex substances that cannot be vaporized we provide an alternative solution: Direct Liquid Injection for CVD or Atomic Layer Deposition (ALD). Our DLI-CVD / DLI-ALD machines are equipped with direct liquid injection vaporizers for the utilization of the widest range of chemicals including low vapor pressure and thermally unstable precursors. These machines offer multi process capability inside the same process chamber : CVD, ALD, MOCVD, pulse pressure CVD, RTP, RTCVD. This unique feature offers unlimited capabilities for the development of new materials.